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A Novel Analytical Study of Anisotropic Multi-Layer Elliptical Structures Containing Graphene Layers

机译:含石墨烯层的各向异性多层椭圆结构的新分析研究

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This article aims to propose a novel analytical model for anisotropic multi-layer elliptical structures incorporating graphene layers. The multi-layer structure is formed of various magnetic materials, and each one has the permittivity and permeability tensors of $overline {overline {arepsilon }}$ and $overline {overline {mu }}$ , respectively. An external magnetic bias has been applied in the axial direction. A graphene layer, with isotropic surface conductivity of ${sigma }$ , has been sandwiched between the two adjacent anisotropic materials. A novel matrix representation has been derived to find the propagation parameters of the multi-layer structure. Two exemplary important cases of the proposed general structure, as waveguides, have been investigated to show, first, the validity of our proposed analytical model and second, the richness of the general structure. The analytical and simulation results show an excellent agreement. A very large value of figure of merit (FOM), e.g., FOM = 110, is achieved for the second structure for the chemical potential and external magnetic bias of ${mu }_{ext{c}}={0.9}$ eV and ${B}_{0}=1$ T, respectively. Our general structure and its analytical model can be exploited to design innovative terahertz devices such as absorbers, couplers, and cloaks.
机译:本文旨在提出一种新的分析模型,用于包含石墨烯层的各向异性多层椭圆结构。多层结构由各种磁性材料形成,并且每个磁性材料具有介电常数和渗透性张量<内联公式XMLNS:MML =“http://www.w3.org/1998/math/mathml”xmlns:xlink =“http://www.w3.org/1999/xlink”> $ overline { overline { varepsilon}} $ 和<内联公式XMLNS:MML =“http://www.w3.org/1998/math/mathml”xmlns:xlink =“http://www.w3.org/1999/xlink”> $ overline { overline { mu}} $ , 分别。在轴向上施加外部磁偏压。具有各向同性表面电导率的石墨烯层<内联公式XMLNS:MML =“http://www.w3.org/1998/math/mathml”xmlns:xlink =“http://www.w3.org/1999/xlink”> $ { sigma} $ ,已经夹在两个相邻的各向异性材料之间。已经导出了一种新颖的矩阵表示来找到多层结构的传播参数。拟议的一般结构的两个示例性重要案例已被研究表明,首先,我们提出的分析模型的有效性和第二,一般结构的丰富性。分析和仿真结果表明了一个很好的一致性。对于化学电位和外部磁偏压的第二结构,实现了优异(FOM)的非常大的优点(FOM)值,例如FOM = 110<内联公式XMLNS:MML =“http://www.w3.org/1998/math/mathml”xmlns:xlink =“http://www.w3.org/1999/xlink”> $ { mu} _ { text {c}} = {0.9} $ EV和<内联公式XMLNS:MML =“http://www.w3.org/1998/math/mathml”xmlns:xlink =“http://www.w3.org/1999/xlink”> $ {B} _ {0} = 1 $ T分别。我们的一般结构及其分析模型可以利用设计创新的太赫兹设备,如吸收剂,耦合器和斗篷。

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