HIGH TEMPERATURE ANISOTROPIC ETCHING OF MULTI-LAYER STRUCTURES

摘要

A kind of alternative etching chemistry composition, which can provide inherently anisotropic etching, and be formed not needing heavy polymer deposition notch, provide one kind through the invention. It executes the etching and is greater than about 160 °C in substrate temperature using HBr and N2, to provide the substantially free anisotropic etching process without indentation and weight percent. Alternative etching chemistry composition allows generating the ICP plasma etching systems that the substantially vertical feature with smooth side wall includes multiple indiums layered.