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首页> 外文期刊>IEEE Transactions on Magnetics >Influence of ion implantation on permeability disaccommodation and magnetic losses of cobalt
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Influence of ion implantation on permeability disaccommodation and magnetic losses of cobalt

机译:离子注入对钴磁导率失衡和磁损耗的影响

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摘要

Effect of nitrogen and oxygen ion implantation (80 keV) on thin polycrystalline cobalt wire have been studied on the basis of residual loss angle and magnetic after-effect measurements from 300 K to 450 K, using an automated Maxwell bridge. On a strongly temperature-dependent residual loss angle curve, after oxygen ion implantation (dose 10/sup 19/ m/sup -2/), an additional-radiation maximum at 350 K occurs, which might be attributed to a relaxation effect due to a reorientational or migrational motion of interstitial atoms.
机译:基于残余损耗角和使用自动麦克斯韦电桥在300 K至450 K的磁后效应测量,研究了氮和氧离子注入(80 keV)对多晶钴细丝的影响。在与温度密切相关的残余损耗角曲线上,氧离子注入后(剂量10 / sup 19 / m / sup -2 /),在350 K处出现了最大辐射附加值,这可能归因于:间隙原子的重新定向或迁移运动。

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