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5 Gb/in/sup 2/ recording demonstration with conventional AMR dual element heads and thin film disks

机译:使用传统的AMR双元件磁头和薄膜磁盘进行5 Gb / in / sup 2 /记录演示

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We have successfully demonstrated magnetic recording at an areal density of 5 Gb/in/sup 2/ and a data rate of 10 MB/s using narrow track dual element heads with conventional AMR sensors and low noise Co alloy thin film disks. In this work, the target densities of 240 K bpi/spl times/21 K tpi were achieved by a combination of narrow track and low-flying technologies. The write and read head trackwidths were reduced to submicron dimensions, with high moment pole-tips to maintain good writability. At the same time, magnetic spacing was substantially reduced by using low-flying airbearing surface designs. Finally, significant signal-to-noise improvements were attained with the development of high sensitivity AMR read heads and very low noise thin film media. Recording tests showed satisfactory writability in terms of overwrite and hard-transitions from the submicron width write heads. Readback yielded symmetrical signals close to 1 mV//spl mu/m and rolloff measurements yielded 50% densities as high as 7000 fc/mm. Track profile and microprofile measurements showed write and read trackwidths to be around 1.2 /spl mu/m and 0.7 /spl mu/m respectively, with tight side-writing and sidereading characteristics. An overall assessment of the parametric recording results suggested an areal density feasibility of around 5 Gb/in2. This projection was confirmed by error rate testing at 10 MB/s using a PRML channel with digital filter and write precompensation. At low ontrack errors of 10/sup -10/-10/sup -9/ without error correction codes, linear densities of /spl sim/240 K bpi and optimized track pitches of /spl sim/1.2 /spl mu/m were achieved, corresponding to areal densities of /spl ges/5 Gb/in/sup /2.
机译:我们已经成功地证明了使用带常规AMR传感器和低噪声Co合金薄膜盘的窄轨双元件磁头以5 Gb / in / sup 2 /的面密度和10 MB / s的数据速率进行磁记录。在这项工作中,通过结合窄轨和低空飞行技术,可以实现240 K bpi / spl次/ 21 K tpi的目标密度。读写磁头的磁道宽度已减小至亚微米尺寸,并具有高力矩极尖以保持良好的可写性。同时,通过使用低空飞行的轴承表面设计,磁性间距大大减小。最后,随着高灵敏度AMR读取头和超低噪声薄膜介质的开发,信噪比得到了显着改善。记录测试表明,在亚微米宽度写磁头的覆盖和硬转换方面,其可写性令人满意。回读产生的对称信号接近1 mV // spl mu / m,滚降测量产生的50%密度高达7000 fc / mm。磁道轮廓和微轮廓测量显示写入和读取磁道宽度分别约为1.2 / spl mu / m和0.7 / spl mu / m,具有紧密的侧面写入和侧面读取特性。对参数记录结果的整体评估表明,面密度约为5 Gb / in2的可行性。通过使用带有数字滤波器和写预补偿的PRML通道以10 MB / s的错误率测试,可以证实这一预测。在10 / sup -10 / -10 / sup -9 /的低轨道误差下,没有纠错码,可以实现/ spl sim / 240 K bpi的线性密度和/ spl sim / 1.2 / spl mu / m的最佳轨道间距,对应于/ spl ges / 5 Gb / in / sup / 2的面密度。

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