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机译:垂直各向异性的不均匀性导致磁存储位的开关电流色散
Key Lab. of Adv. Mater., Tsinghua Univ., Beijing, China;
MRAM devices; boron alloys; cobalt alloys; current density; iron alloys; magnetic hysteresis; magnetic switching; magnetic tunnelling; micromagnetics; perpendicular magnetic anisotropy; CoFeB; MTJ; STT-MRAM; critical switching current density; in-plane hysteresis loop; magnetic memory bit; magnetic tunnel junction; micromagnetic model; nucleation-type reversal process; perpendicular hysteresis loop; perpendicular interfacial anisotropy constant K inhomogeneity; spin transfer torque magnetic random access memory; switching current dispersion; Anisotropic magnetoresistance; Current density; Junctions; Magnetic tunneling; Magnetization; Micromagnetics; Switches; CoFeB; critical switching current; interfacial anisotropy; magnetic random access memory (MRAM); magnetic tunnel junctions (MTJ); micromagnetics; spin transfer torque (STT);
机译:基于平面和垂直各向异性的磁存储器中电流感应开关的综合缩放分析
机译:具有垂直各向异性的每位多位磁存储器的自旋转移转矩切换
机译:通过插入Cr进行界面修饰的Pt / Co / Ta中的电流感应磁化切换可增强垂直磁各向异性和自旋轨道转矩
机译:利用压控磁各向异性脉宽优化的垂直磁隧道结无场自旋轨道转矩切换
机译:用于减小电流的开关设备的垂直磁各向异性材料。
机译:一阶和二阶垂直磁各向异性的磁性结构中自旋霍尔效应引起的临界开关电流密度
机译:ptCoCr结构中的电流感应磁化转换 增强的垂直磁各向异性和自旋轨道扭矩