Demonstration of a four state sensing scheme for a single Pseudo-Spin Valve GMR bit

摘要

A simple and fast method for sensing four states from a single Pseudo-Spin Valve GMR device is presented. Four state sensing shows promise of doubling the potential bit density of Magnetic Random Access Memory (MRAM) and related devices. A new two step method to detect the GMR bit information has been developed here that is simple to implement and which easily allows for compensation of rapid self-heating effects.