Magnetoresistance in La/sub 0.8/Sr/sub 0.2/MnO/sub 3-/spl delta// biepitaxial grain boundary junction

摘要

La/sub 0.8/Sr/sub 0.2/MnO/sub 3-/spl delta// (LSMO) films with 45/spl deg/ in-plane grain boundaries were fabricated using two types of biepitaxial multilayers. The low field MR (magnetoresistance) ratio of 32% at 77 K is a significant value due to the artificial grain boundary effect and it maybe useful for developing spin-dependent tunneling junctions using a LSMO biepitaxial grain boundary. The magnetoresistive properties at two different magnetic fields, parallel or perpendicular to the grain boundary junction, can be interpreted by the different ferromagnetic spin-polarization ordering in ab-plane.