Pseudo-Hall effect and anisotropic magnetoresistance in a micron-scale Ni/sub 80/Fe/sub 20/ device

摘要

The pseudo-Hall effect (PHE) and anisotropic magnetoresistance (AMR) in a micron-scale Ni/sub 80/Fe/sub 20/ six-terminal device, fabricated by optical lithography and wet chemical etching from a high quality UHV grown 30 /spl Aring/ Au/300 A Ni/sub 80/Fe/sub 20/ film, have been studied. The magnetisation reversal in different parts of the device has been measured using magneto-optical Kerr effect (MOKE). The device gives a 50% change in PHE voltage with an ultrahigh sensitivity of 7.3%Oe/sup -1/ at room temperature. The correlation between the magnetisation, magneto-transport properties, lateral shape of the device and directions of the external applied field is discussed based on extensive MOKE, AMR and PHE results.