1-xFe Role of Fe-Doping Effect in 2-D MoS<sub>2</sub>Magnetic Semiconductor
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Role of Fe-Doping Effect in 2-D MoS2Magnetic Semiconductor

机译:铁掺杂效应在二维MoS 2 磁性半导体中的作用

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Two 2-D Mo1-xFexS2(x = 0, 0.01) nanosheets were fabricated by the hydrothermal method. X-ray diffraction shows both samples are formed in hexagonal P63/mmc (2H structure) phase with 2-D morphology. Raman spectra displayed that the peak widths were broadening in the iron-doped sample. AC conductivity experiments revealed that both samples obeyed the small polaron hopping model. The activation energies of x = 0 are 0.121(3) and 0.066(1) eV above and below 200 K. Similarly, two different activation energies, 0.140(2) and 0.082(1) eV above and below 240 K are also found in x = 0.01 sample. The effect of iron-doped may raise the activation energies of small polaron. Diamagnetism and paramagnetism were observed in pure MoS2and iron-doped sample, respectively. Magnetic hysteresis experiments show no loop in both samples, which is evidence that there was not any magnetic domain formed. For x = 0.01 sample, the Brillouin function is conducted to fit the M-H curve. The fit <; μz> of the x = 0.01 sample is about 0.038(1) μB/f.u., which matched the value of 1% Fe4+(S = 2) ion-doped.
机译:两个2-D Mo n 1-x nFe n xS2(x = 0,0.01)纳米片。 X射线衍射显示两个样品均以六边形P6 n 3 n / mmc(2H结构)相,具有二维形态。拉曼光谱表明,铁掺杂样品的峰宽变宽。交流电导率实验表明,两个样品均遵循小极化子跳跃模型。 x = 0的活化能在200 K之上和之下分别为0.121(3)和0.066(1)eV。同样,在240 K之上和之下还发现两种不同的活化能0.140(2)和0.082(1)eV。 x = 0.01样本。掺杂铁的作用可能会提高小极化子的活化能。在纯MoS n 2 n和掺铁样品。磁滞实验显示两个样品中均未出现环,这证明没有形成任何磁畴。对于x = 0.01的样品,进行布里渊函数以拟合M-H曲线。适合<; μ n x = 0.01样本的z n>约为0.038(1)μ n B n / fu,该值与1 %Fe n 4 + n(S = 2)离子掺杂。

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