Optimization of Functional Parameters of Magnetoresistive Fe₂₀Ni₈₀/Fe₅₀Mn₅₀/Fe₂₀Ni₈₀ Films

摘要

In this paper, the effect of some technological and physical factors on properties of SiO/Ta/FeNi/FeMn and SiO/Ta/FeNi/FeMn/FeNi/Ta films, having the anisotropic magnetoresistance (AMR) effect, was investigated. The purpose of this paper was to find the optimum conditions for realization of the peak magnetic biasing in thick (>30 nm) permalloy layers. Essential influence of the protective Ta layer on the achievement of the optimal combination of properties of multilayer AMR films with exchange coupling is shown. Dependences of the exchange bias field () and maximum derivation of resistance with respect to magnetic field on the thickness of functional permalloy layers are investigated. The preproduction prototypes of a sensor are produced and sensor transformation function is investigated.