首页> 外文期刊>IEEE Transactions on Magnetics >Temperature Stability of Magnetic Field-Induced Strain and Field-Controlled Shape Memory Effect on Ni{sub}52Mn{sub}164Fe{sub}8Ga{sub}23.6 Single Crystals
【24h】

Temperature Stability of Magnetic Field-Induced Strain and Field-Controlled Shape Memory Effect on Ni{sub}52Mn{sub}164Fe{sub}8Ga{sub}23.6 Single Crystals

机译:Ni {sub} 52Mn {sub} 164Fe {sub} 8Ga {sub} 23.6单晶的磁场诱导应变温度稳定性和场控形状记忆效应

获取原文
获取原文并翻译 | 示例
           

摘要

The temperature dependence of the magnetic field-induced strain (MFIS) and the field-controlled shape memory effect in Ni{sub}52Mn{sub}16.4Fe{sub}8Ga{sub}23.6 single crystals were investigated by measuring the MFIS and measuring the magnetic field-enhanced transformation strain with a field bias applied in the [001] and [010] directions of the parent phase, respectively. The results show that such material combined with the martensitic transformation can product large field-enhanced transformation strain and large MFIS. The strain accompanying the martensitic transformation is -1.61% in zero field and can be enhanced to -3.30% by a field of 960 kA/m. A MFIS of 1.04% has been induced along [001] in unstressed crystals with saturated magnetic field of 600 kA/m applied along the same direction at near martensitic transformation temperature. It was found that the MFIS is almost temperature independent; the maximum decrease of the saturated MFIS is less than 10%, from 265 K to 100 K. This well-behaved temperature response makes this alloy particularly valuable for industrial and military smart actuators and transducers. Furthermore, it was found that the direction in which the MFIS has the largest value is always the [001], namely, the growth direction of the crystals.
机译:通过测量MFIS和测量,研究了Ni {sub} 52Mn {sub} 16.4Fe {sub} 8Ga {sub} 23.6单晶中磁场感应应变(MFIS)的温度依赖性和场控形状记忆效应。在母相的[001]和[010]方向分别施加磁场偏置的磁场增强的转变应变。结果表明,这种材料与马氏体相结合可以产生较大的场增强相变应变和较大的MFIS。马氏体相变所伴随的应变在零场下为-1.61%,在960 kA / m的场下可以提高到-3.30%。在接近马氏体转变温度下沿相同方向施加600 kA / m饱和磁场的无应力晶体中,沿[001]诱导的MFIS为1.04%。结果发现,MFIS几乎与温度无关。饱和MFIS的最大降低从265 K到100 K小于10%。这种行为良好的温度响应使该合金特别适用于工业和军事智能执行器和传感器。此外,发现MFIS具有最大值的方向总是[001],即晶体的生长方向。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号