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Giant Magnetoresistance, Microstructure, and Application Characteristics of Amorphous CoNbZr-Based Pseudo-Spin Valves

机译:基于非晶CoNbZr的伪自旋阀的巨磁阻,微结构和应用特性

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We have fabricated pseudo-spin-valve (PSV) multilayers with amorphous CoNbZr alloy as a soft magnetic layer and a buffer layer by magnetron sputtering. We investigated the multilayers' giant magnetoresistance (GMR), microstructure, thermal annealing effects, and application characteristics. Our results show that the film microstructure, consequently the magnetostatic coupling effect and the magnetization reversal process, strongly depends on the CoNbZr thickness. We observed antiparallel magnetization alignments in the samples with a 2-4 nm CoNbZr layer and a measured maximum GMR ratio of 6.5%. The PSV with 4 nm CoNbZr has a superior thermal stability to 400℃ as a result of the dense and homogeneous Cu spacer. After patterning with a 6 μm × 1 μm elliptic stripe, the structure forms a single domain. The dynamic GMR behavior under a 10 kHz sinusoidal magnetic field indicates the patterned stripe has a linear and stable GMR response. We therefore believe that PSVs with amorphous CoNbZr have good potential for spintronic devices.
机译:我们通过磁控溅射制备了以非晶态CoNbZr合金为软磁层和缓冲层的伪自旋阀(PSV)多层。我们研究了多层的巨磁阻(GMR),微观结构,热退火效应和应用特性。我们的结果表明,薄膜的微观结构,因此的静磁耦合效应和逆磁化过程很大程度上取决于CoNbZr的厚度。我们在具有2-4 nm CoNbZr层和测得的最大GMR比为6.5%的样品中观察到反平行磁化取向。由于具有密集且均匀的Cu隔离层,具有4 nm CoNbZr的PSV具有高达400℃的优异热稳定性。用6μm×1μm的椭圆形条纹图案化后,该结构形成单个畴。在10 kHz正弦磁场下的动态GMR行为表明,图案化的条纹具有线性且稳定的GMR响应。因此,我们认为具有非晶态CoNbZr的PSV在自旋电子器件中具有良好的潜力。

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