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机译:宽带,高线性,2.8-GS / S,10位精确的样品和130纳米SiGe BICMOS的放大器
Ohio State Univ Electrosci Lab Columbus OH 43212 USA;
US Air Force Res Lab Wright Patterson AFB OH 45433 USA;
Ohio State Univ Electrosci Lab Columbus OH 43212 USA;
Ohio State Univ Electrosci Lab Columbus OH 43212 USA;
US Air Force Res Lab Wright Patterson AFB OH 45433 USA;
Design Knowledge Co TDKC Fairborn OH 45324 USA;
Ohio State Univ Electrosci Lab Columbus OH 43212 USA;
US Air Force Res Lab Wright Patterson AFB OH 45433 USA;
US Naval Res Lab Washington DC 20375 USA;
US Naval Res Lab Washington DC 20375 USA;
Ohio State Univ Electrosci Lab Columbus OH 43212 USA;
RF and mixed signal IC design; RF front ends; sampling circuits; direct sampling; channelized; software-defined; track-and-hold; sample-and-hold; distortion cancellation; BiCMOS; SiGe;
机译:130nm SiGe BiCMOS中的宽带,高线性度,2.8GS / s,10位准确采样保持放大器
机译:在0.18 mu m sige bicmos中,低失真20 gs / s四通道时间交错的样品和保持放大器
机译:宽带直流耦合16 GS / S采样和保持放大器,在0.13 mu m Sige Bicmos工艺中
机译:130 nm SiGe BiCMOS中的高线性度,2.8 GS / s,10位准确度,采样和保持放大器
机译:适用于WCDMA手机应用的高效,高线性硅锗BiCMOS功率放大器。
机译:130-nm CmOs工艺中由于栅极氧化过压引起的采样和保持放大器的电路性能下降
机译:10位视频BiCmOs跟踪保持放大器。