Operation of a fully integrated GaAs-Al/sub x/Ga/sub 1-x/As FET-SEED: a basic optically addressed integrated circuit

摘要

The authors experimentally demonstrate the operation of a fully integrated optoelectronic circuit with optical input and output consisting of a p-i-n photodetector and load resistor, a depletion-mode GaAs-Al/sub x/Ga/sub 1-x/As heterostructure field-effect transistor (HFET) and self-biased HFET load, together with an output GaAs-Al/sub x/Ga/sub 1-x/As multiple quantum-well optical modulator. All elements have been monolithically integrated within a 50- mu m*50- mu m area. A low optical power input causes a modulation of a higher-power output, demonstrating optical signal amplification.