Low-threshold single-quantum-well InGaAs/GaAs lasers grown by metal-organic chemical vapor deposition on structure substrates

摘要

Low-threshold current (as low as 3.0 mA) and high-external efficiency ( approximately=88%) InGaAs/GaAs lasers emitting at 1 mu m under a stable fundamental transverse mode were obtained by using the temperature engineered growth technique for the growth on prepatterned substrates.