Temperature measurements of separate absorption, grading, charge, and multiplication (SAGCM) InP/InGaAs avalanche photodiodes (APD's)

摘要

Temperature-dependent measurements were per formed on planar separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiodes (APD's). The bandwidth versus gain dependence, gain, and breakdown voltage are strongly correlated with the temperature. The gain-bandwidth product and minimum gain for useful bandwidth both increase with decreasing temperature or decreasing breakdown voltage. This is the first report of non-room-temperature performance of these devices.