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首页> 外文期刊>IEEE Photonics Technology Letters >Multiple-layer optical interconnections using through-wafer hollow-dielectric-waveguide vias
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Multiple-layer optical interconnections using through-wafer hollow-dielectric-waveguide vias

机译:使用晶片中空介电波导过孔的多层光学互连

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摘要

We investigate lossy hollow-dielectric-waveguide vias in a dense optical interconnection system as a means by which many 2-D processor layers can communicate simultaneously with minimal signal attenuation. Via-guided multiple-layer signal attenuation and design guidelines are derived for both GaAs and Si substrate materials, and are compared to those for unguided interconnections at 0.85 /spl mu/m and 1.3 /spl mu/m. We find that optical interconnections using hollow-dielectric-waveguide vias can support dense low-loss interconnections at 0.85 /spl mu/m, whereas propagation through the substrate is preferred at 1.3 /spl mu/m.
机译:我们研究密集光学互连系统中的有损空心介电波导通孔,以此作为许多2-D处理器层可以同时以最小信号衰减进行通信的方法。对GaAs和Si衬底材料都得出了导通孔导通的多层信号衰减和设计指南,并与0.85 / spl mu / m和1.3 / spl mu / m的非导通互连进行了比较。我们发现使用中空介电波导过孔的光学互连可以以0.85 / spl mu / m的密度支持密集的低损耗互连,而通过基板的传播优选为1.3 / spl mu / m。

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