High-power and wide-temperature-range operations of InGaAsP-InP strained MQW lasers with reverse-mesa ridge-waveguide structure

摘要

A new structure for an InP-based ridge-waveguide laser is demonstrated. It has a reverse-trapezoid-ridge shape that offers reduced threshold current and smaller series resistance suitable for wide-temperature-range and high power operations. A 1.3 /spl mu/m strained InGaAsP-InP MQW laser with the new ridge structure demonstrated over 200 mW output under a 440 mA injected current. Low threshold (>25 mA) and high efficiency (<0.3 W/A) operation was also achieved under 90/spl deg/C for 1.53 /spl mu/m strained MQW lasers.