High performances and reliability of novel GaAs MSM photodetectors with InGaP buffer and capping layers

摘要

To avoid the trap-induced, low-frequency internal gain and improve the reliability for thermal storage test, a novel structure of GaAs metal-semiconductor-metal photodetector with InGaP buffer and capping layers is investigated. The dark current density of the photodetectors is about 7 /spl mu/A/cm/sup 2/. Its responsivity at 0.83-/spl mu/m wavelength is about 0.48 A/W. After thermal storage at 150/spl deg/C for 10 h, no performance degradation was found in the novel photodetectors.