Single-mode operation in an antiguided vertical-cavity surface-emitting laser using a low-temperature grown AlGaAs dielectric aperture

摘要

Data are presented on a single mode InGaAs DBR MQW vertical-cavity surface-emitting laser that uses a low temperature growth of a highly resistive AlGaAs dielectric aperture. An epitaxial regrowth is used to contact the laser active region, with the AlGaAs aperture resulting in cavity-induced antiguiding. Antiguiding is observed in 6-/spl mu/m diameter devices, with single-mode operation obtained over the range of continuous-wave operation (about 8/spl times/ threshold). Pulsed operation shows lowest order transverse mode profiles up to 24/spl times/ threshold.