Monolithic integration in InGaAs-InGaAsP multiquantum-well structure using laser processing

摘要

We report the use of a laser irradiation process, which combines irradiation by continuous wave and Q-switched pulsed Nd:YAG lasers, to promote quantum-well intermixing. Differential shifts up to 70 meV have been obtained in GaInAsP structures. Extended cavity-ridge lasers with 800-/spl mu/m-long active sections and 1000-/spl mu/m-long passive sections, were fabricated. The slope efficiency of the extended cavity lasers is very close to that of 800-/spl mu/m-long all-active lasers, and the threshold current is 10 mA higher than for an 800-/spl mu/m-long all-active device. The loss in the intermixed single-mode waveguide is 2.1 cm/sup -1/.