Light-emitting diode emitting at 650 nm with 200-MHz small-signal modulation bandwidth

摘要

State-of-the-art modulation bandwidths are presented for multiquantum well resonant cavity light emitting diodes (RCLED's) emitting at 650 nm. 84-/spl mu/m size epoxy coated RCLED's have a 1.4-mW (CW) output power and a small signal modulation bandwidth of 200 MHz at 40 mA bias. 150-/spl mu/m diameter devices yield 3.25-mW and 150-MHz bandwidth at 70-mA bias. An open eye-diagram at 622 Mb/s achieved for the 84-/spl mu/m device makes it very attractive for SONET OC-12 data communication links.