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首页> 外文期刊>IEEE Photonics Technology Letters >Realization of Directional-Coupler-Based Optical Waveguide Devices by Ultraviolet-Imprinting Technique Using Sol-Gel Derived Inorganic GeO$_{2}$ : SiO$_{2}$ Fi
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Realization of Directional-Coupler-Based Optical Waveguide Devices by Ultraviolet-Imprinting Technique Using Sol-Gel Derived Inorganic GeO$_{2}$ : SiO$_{2}$ Fi

机译:利用溶胶-凝胶衍生的无机GeO $ _ {2} $:SiO $ _ {{2} $ Fi}的紫外压印技术实现基于方向耦合器的光波导器件

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摘要

An efficient fabrication scheme of directional coupler (DC) optical waveguide devices is demonstrated using a direct ultraviolet imprinting (DUI) technique in sol-gel derived inorganic 0.2GeO$_{2}$  : 0.8SiO $_{2}$ slab waveguide. The slab waveguide has a $sim$3-$mu$m-thick photosensitive inorganic 0.2GeO$_{2}$ : 0.8SiO$_{2}$ film which is prepared by the sol-gel spin-coating technique on (10 $mu$m) SiO$_{2}$ –Si substrate. This inorganic thick film of slab waveguide has the ability to induce a high refractive index change of $sim 5times 10^{-3}$ under ultraviolet irradiations, which is suitable for the fabrication of waveguiding channel of photonic devices by a DUI technique. DC geometries were theoretically evaluated by the beam propagation method for various optical power splitting ratios and experimental performances of DCs 3-dB light splitter and complete power exchange from one waveguide to another were demonstrated and found to be in good agreement with the simulation.
机译:利用直接紫外压印(DUI)技术,在溶胶-凝胶衍生的无机0.2GeO $ _ {2} $:0.8SiO $ _ {2} $平板波导中,证明了定向耦合器(DC)光波导器件的有效制造方案。平板波导具有厚度为3到3微米的光敏无机0.2GeO $ _ {2} $:0.8SiO $ _ {2} $薄膜,该薄膜通过溶胶-凝胶旋涂技术在(10 (μμm)SiO $ _ {2} $ -Si衬底。板状波导的无机厚膜具有在紫外线照射下引起$ sim 5×10 ^ {-3} $的高折射率变化的能力,这适用于通过DUI技术制造光子器件的波导通道。通过光束传播方法对各种光功率分配比的DC几何形状进行了理论评估,并证明了DC 3 dB分光器的实验性能,并证明了从一个波导到另一个波导的完全功率交换,并与仿真非常吻合。

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