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首页> 外文期刊>IEEE Photonics Technology Letters >Passively Mode-Locked High-Power (210 mW) Semiconductor Lasers at 1.55-$mu$m Wavelength
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Passively Mode-Locked High-Power (210 mW) Semiconductor Lasers at 1.55-$mu$m Wavelength

机译:无源锁模大功率(210 mW)半导体激光器,波长为1.55-μm

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摘要

We report on the generation of stable passively mode-locked pulses at 1.55-mum wavelength from high-power electrically pumped, large transverse mode semiconductor diode lasers. Optical pulses as short as 5.8 ps were measured directly from the laser. This is the shortest pulsewidth reported (without external compression) from a monolithic mode-locked slab coupled optical waveguide laser. The highest average power measured in mode-locked operation was 212 mW albeit the pulsewidths were larger. It was also found that length of the laser changes the power-current efficiency with the largest recorded efficiency of 165 mW/A.
机译:我们报告了从大功率电泵浦,大横向模式半导体二极管激光器产生的波长为1.55μm的稳定被动锁模脉冲。直接从激光器测量到短至5.8 ps的光脉冲。这是单片锁模平板耦合光波导激光器报告的最短脉冲宽度(无外部压缩)。锁模操作中测得的最高平均功率为212 mW,尽管脉冲宽度较大。还发现激光器的长度改变了功率-电流效率,记录的最大效率为165 mW / A。

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