High-power passively mode-locked semiconductor lasers

摘要

We have developed optically pumped passively mode-locked vertical-external-cavity surface-emitting lasers. We achieved as much as 950 mW of mode-locked average power in chirped 15-ps pulses, or 530 mW in 3.9-ps pulses with moderate chirp. Both lasers operate at a repetition rate of 6 GHz and have a diffraction-limited output beam near 950 nm. In continuous-wave operation, we demonstrate an average output power as high as 2.2 W. Device designs with a low thermal impedance and a smooth gain spectrum are the key to such performance. We discuss design and fabrication of the gain structures and, particularly, their thermal properties.