A 25-Gb/s Monolithic Optical Transmitter With Micro-Ring Modulator in 130-nm SoI CMOS

摘要

An Si photonic transmitter is integrated in a 130-nm silicon-on-insulator complementary metal–oxide–semiconductor technology. A high-speed photonic ring modulator is designed for 25-Gb/s operation with an 8-dB extinction ratio. The ring is driven with a $2.4hbox{-}{rm V}_{rm pp}$ swing using a low-power inverter driver. With a reference receiver, the 25-Gb/s link is measured with a bit error rate (BER) of $10^{-12}$. The total transmitter power consumption is 17 mW at 25 Gb/s for an energy efficiency of 680 fJ/b excluding laser and ring tuning power.