Fabrication and Characterization of Light-Emitting Diodes Comprising Highly Ordered Arrays of Emissive InGaN/GaN Nanorods

摘要

A simple approach to fabricating ordered InGaN/GaN nanorod arrays light-emitting diodes (LEDs) with strongly directional light emission is reported. The far field radiation pattern of the nanorod arrays LEDs shows preferential emission in a ${pm}{10}^{circ}$ cone about the surface normal and contained other features arising from diffraction associated with the periodicity of the nanorod array. The output power per unit in-plane emissive area at 300-mA drive current is three times larger than that of an equivalent planar LED.