2.0 W CW X-band GaInP/GaAs heterojunction bipolar transistor

摘要

We report 2.0 W CW (continuous wave) output power at 9.5 GHz with a GaInP/GaAs HBT having a total emitter area of 2/spl times/500 /spl mu/m/sup 2/. The collector-emitter bias dependence and the frequency dependence of the large-signal performance of both the 2/spl times/400 and 2/spl times/500 /spl mu/m/sup 2/ unit cells are described. The uniformity of the output power and power-added efficiency is also discussed.