V-band monolithic low-noise amplifiers using ion-implanted n/sup +/-self-aligned GaAs MESFETs

摘要

V-band monolithic low-noise amplifiers (LNAs) were successfully fabricated using a manufacturable GaAs MESFET process. Ion-implanted n/sup +/-self-aligned GaAs MESFETs, which are used to make digital ICs, were employed. A fabricated single-stage LNA with a 0.13 /spl mu/m Au/WSiN gate demonstrated a noise figure of 5 dB at 60 GHz with an associated gain of 7 dB. A two-stage LNA achieved a noise figure of 6 dB at 60 GHz with an associated gain of 14 dB. This is the first demonstration of ion-implanted n/sup +/-self-aligned GaAs MESFETs for millimeter-wave monolithic integrated circuits (MIMICs). The results are among the best ever reported for V-band GaAs-MESFET amplifiers.