High-speed photoluminescence mapping of III-V epitaxial layers for light-emitting diodes

摘要

Three examples are presented which demonstrate how photoluminescence wafer mapping is routinely used in the development and manufacturing of III-V optoelectronic materials and devices. Statistical data from the full-wafer PL scans of epitaxial layers is correlated with the device performance of fabricated light-emitting diodes, and can be used to predict the brightness, uniformity and yield of these devices.