The integration of III-V optoelectronics with silicon circuitry

摘要

The integration of III-V optoelectronics with silicon circuitry provides the potential for fabricating dense parallel optical interconnects with data links capable of Terabit aggregate data rates. This paper reviews many of the current approaches used for the fabrication of integrated optoelectronic devices and then highlights the performance results. Finally, the applied method is reviewed in greater detail with recent results on VCSEL, MESFET, and photodiode integration presented.