Characteristics of spectral-hole burning of InAs self-assembled quantum dots

摘要

Spectral-hole burning of InAs self-assembled quantum dots (QDs) embedded in pin-diode was observed. At 5 K, a narrow hole with width of less than 1 mm was observed and the hole depth increased as electric field increased with the writing light power of 8 mW. The hole was observed up to 40 K. The spectral hole was broadened as the writing light power increases from 8 to 20 mW. Spectral-hole width at the 8 mW was well fitted with the convolution integral of Gaussian distribution for reading light and Lorentzian distribution for absorption change taking into account homogeneous broadening of InAs QDs of /spl les/80 /spl mu/eV. Spectral-hole lifetime at the 8 mW was estimated to be in the order of 10/sup -6/ s. Optical absorption spectrum of 15-stacked InAs QD structure was also observed at 77 K and 300 K.