Photonic integrated circuits fabricated using ion implantation

摘要

Intermixing the wells and barriers of quantum-well (QW) lasernheterostructures generally results in an increase in the bandgap energynand is accompanied by changes in the refractive index. A technique,nbased on ion implantation-induced QW intermixing, has been developed tonenhance the quantum-well intermixing (QWI) rate in selected areas of anwafer. Such processes offer the prospect of a powerful and simplenfabrication route for the integration of discrete optoelectronic devicesnand for forming photonic integrated circuits