Interdiffused quantum wells for lateral carrier confinement inVCSELs

摘要

We show that it is necessary to eliminate carrier diffusion in thenactive region for viable vertical-cavity lasers (VCLs) with smallndimensions. However, methods that work well in reducing lateral carriernleakage in narrow ridge-waveguide lasers such as silicon inducedndisordering may be problematic in VCL structures. Encouraging resultsnfrom novel methods for impurity free intermixing for VCL applicationsnare presented