Cleaved and etched facet nitride laser diodes

摘要

Room-temperature (RT) pulsed operation of blue (420 nm) nitride-based multiquantum-well laser diodes grown on a-plane and c-plane sapphire substrates has been demonstrated. Structures investigated include etched and cleaved facets as well as doped and undoped quantum wells. A combination of atmospheric and low-pressure metal organic chemical vapor deposition using a modified two-flow horizontal reactor was employed. Threshold current densities as low as 12.6 kA/cm/sup 2/ were observed for 10/spl times/1200 /spl mu/m lasers with uncoated reactive ion etched facets on c-plane sapphire. Cleaved facet lasers were also demonstrated with similar performance on a-plane sapphire. Laser diodes tested under pulsed conditions operated up to 6 h at RT. Lasing was achieved up to 95/spl deg/C and up to a 150-ns pulselength (RT). Threshold current increased with temperature with a characteristic temperature T/sub 0/ of 114 K.