High-speed GaN growth and compositional control of GaN-AlGaNsuperlattice quasi-ternary compounds by RF-radical source molecular beamepitaxy

摘要

Novel growth technologies of III-nitrides for fabricating opticalndevices by molecular beam epitaxy using RF-plasma excited nitrogenn(RF-MBE) were investigated. A relatively high-growth rate, up to 1.4nΜm/h of GaN with high-electrical and high-optical quality wasnobtained. The concept of AlGaN quasi-ternary (QT) compounds, consistingnof GaN-AlGaN short period superlattice, was demonstrated and the Alncomposition was controlled with a shutter control method in the range ofn0-0.47. Using the QT technology, anGaN-Al0.07Ga0.933N-Al0.3Ga0.7nN multiquantum-well heterostructure was fabricated to show theneffectiveness of the method