Characteristics of InGaN-AlGaN multiple-quantum-well laser diodes

摘要

We demonstrate room-temperature pulsed current-injected operationnof InGaAlN heterostructure laser diodes with mirrors fabricated bynchemically assisted ion beam etching. The multiple-quantum-well devicesnwere grown by organometallic vapor phase epitaxy on c-face sapphirensubstrates. The emission wavelengths of the gain-guided laser diodesnwere in the range from 419 to 432 nm. The lowest threshold currentndensity obtained was 20 kA/cm2 with maximum output powers ofn50 mW. Longitudinal Fabry-Perot modes are clearly resolved in thenhigh-resolution optical spectrum of the lasers, with a spacingnconsistent with the cavity length. Cavity length studies on a set ofnsamples indicate that the distributed losses in the structure are on thenorder of 30-40 cm-1