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首页> 外文期刊>IEEE journal of selected topics in quantum electronics >Design and analysis of single-mode oxidized VCSELs for high-speed optical interconnects
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Design and analysis of single-mode oxidized VCSELs for high-speed optical interconnects

机译:高速光互连的单模氧化VCSEL的设计和分析

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Oxide-confined vertical-cavity surface-emitting laser diodes (VCSELs) are fabricated for applications in high-performance optical interconnects. Both 980-nm as well as 850-nm wavelength devices in one- and two-dimensional arrays are investigated. Noise properties of single- and multimode devices under different operation conditions are relative intensity noise of single-mode devices can be as low as -150 dB/Hz at output powers of about 1 mW and feedback levels up to -30 dB. Data rates up to 12.5 Gb/s with bit error rates below 10/sup -11/ are achieved with VCSELs showing stable single-mode emission at large-signal modulation, combined with modulation bandwidths exceeding 10 GHz. Arrays with 4/spl times/8 elements flip-chip mounted on Si CMOS driver chips ready for use in parallel data transmission systems are presented.
机译:氧化物限制的垂直腔面发射激光二极管(VCSEL)被制造用于高性能光学互连。对一维和二维阵列中的980 nm和850 nm波长的设备都进行了研究。单模和多模设备在不同操作条件下的噪声特性是,单模设备的相对强度噪声在输出功率约为1 mW且反馈电平高达-30 dB时可低至-150 dB / Hz。 VCSEL在大信号调制下显示稳定的单模发射,并结合超过10 GHz的调制带宽,可实现高达12.5 Gb / s的数据速率和低于10 / sup -11 /的误码率。提出了具有4 / spl×8个元件倒装芯片的阵列,该阵列倒装在准备用于并行数据传输系统的Si CMOS驱动器芯片上。

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