We report on advances in vertical-cavity surface-emitting lasers (VCSELs) and vertical-cavity semiconductor optical amplifiers (VCSOAs) operating at 1.3 and 1.55 /spl mu/m. These devices have the potential to dramatically reduce manufacturing costs compared to traditional in-plane devices, while allowing for the possibility of producing integrated modules and arrays on wafer. A number of different technologies have been proposed and demonstrated for these devices. We discuss the different materials systems used for distributed Bragg reflectors (DBRs) and active regions. Recent designs and results are summarized. Wafer bonded VCSELs and VCSOAs are examined in detail.
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机译：我们报告了工作在1.3和1.55 / spl mu / m的垂直腔表面发射激光器（VCSEL）和垂直腔半导体光放大器（VCSOA）的进展。与传统的平面内设备相比，这些设备具有显着降低制造成本的潜力，同时允许在晶圆上生产集成模块和阵列的可能性。已经为这些设备提出并展示了许多不同的技术。我们讨论了用于分布式布拉格反射器（DBR）和有源区域的不同材料系统。总结了最近的设计和结果。晶圆键合的VCSEL和VCSOA进行了详细检查。
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