No density pinning in VCSELs due to hole burning at saturation

摘要

Theoretical two-dimensional (2-D) analysis and simulations address hole-burning effects and demonstrate that the cross-section averaged carrier density increases continuously with applied bias, rising above the lasing threshold, even as N/sub th/(T) increases with temperature. There is no "density pinning" at the threshold value corresponding to the device temperature T, contrary to the usual one-dimensional (1-D) theory conclusion. It is conjectured that there is no bias voltage pinning at the junction and the voltage-current relation exhibits modified diode law behavior.