No density pinning in VCSELs due to hole burning at saturation

摘要

Theoretical two-dimensional (2-D) analysis and simulations address hole-burning effects and demonstrate that the cross-section averaged carrier density increases continuously with applied bias, rising above the lasing threshold, even as Nth(T) increases with temperature. There is no "density pinning" at the threshold value corresponding to the device temperature T, contrary to the usual one-dimensional (1-D) theory conclusion. It is conjectured that there is no bias voltage pinning at the junction and the voltage-current relation exhibits modified diode law behavior.