机译:1.3μm范围的GaInNAsSb-GaAs VCSEL
III-V semiconductors; MOCVD; arsenic compounds; current density; electric resistance; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser mirrors; optical communication equipment; quantum well lasers; reflectivity; semiconductor laser array;
机译:GaAs基材上1.3-μm范围BGALNA量子孔的室温光致发光和电致发光
机译:1.3μm范围内的激光器在GaAs上InAs量子点生长的不同概念的比较
机译:1.3-μm范围的GaInNAsSb-GaNAs3和5个QWs激光器的阈值电流密度非常低
机译:1.3 / spl mu / m范围的GaInNAsSb VCSEL和VCSEL阵列的首次CW操作
机译:温度稳定,节能,高比特率980nm vcsels =温度稳定且节能为洪水比特率的980nm vcsels
机译:异核微亥姆霍兹线圈有助于在可定制微流控芯片上对nL体积样品进行微米范围的空间和亚赫兹光谱分辨率NMR
机译:IngaAsn用于制造1.3微米的VCSEL结构