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机译:1.3- / splμm/ m GaInNAs量子阱激光器中复合机制的高压研究
Sch. of Electron. & Phys. Sci., Univ. of Surrey, Guildford, UK;
gallium compounds; indium compounds; III-V semiconductors; quantum well lasers; high-pressure effects; electron-hole recombination; spontaneous emission; effective mass; energy level crossing; conduction bands; carrier density; Auger effect; nitrogen; high-pressure studies; recombination mechanisms; GaInNAs quantum-well lasers; recombination current; high-pressure spontaneous emission measurements; threshold current; Auger-related nonradiative recombination current; defect-related monomolecular nonradiative recombination current; threshold carrier density; electron effective mass; enhanced level-anticrossing; GaInNAs conduction band; nitrogen level; 1.3 mum; GaInNAs;
机译:高压研究1.3-μmGaInNAs量子阱激光器中的复合机理
机译:GaInNAs量子阱激光器中的1.3- / splμm/ m连续波激光操作
机译:基于InP的应变层量子阱激光器1.3- / splμm/ m的阈值电流温度敏感性的主要机理研究
机译:具有低N含量GaNAs势垒层的MOCVD生长的1.3 / splμ/ m范围的GaInNAs三重量子阱激光器的低阈值操作
机译:可见光谱铟镓-磷-砷化物激光和量子阱异质结构激光的高压测量。
机译:激光周边虹膜切开术与激光周边虹膜切开术加激光周边虹膜成形术治疗多机制角膜闭合性:一项随机对照试验的研究方案
机译:高压下1.3μm GaInNAs量子阱激光器中俄歇复合电流的异常增加
机译:电子束激发高压复合激光器可行性研究。