Enhanced Performances of Quantum Dot Lasers Operating at 1.3 $mu$ m

摘要

Due to their $delta$-like density of states, quantum dots (QDs) were expected to improve laser device performances with respect to quantum wells (QWs). Nevertheless, some important drawbacks limit this technology. For instance, QD laser still suffers from a low value of the modal gain, due to the low areal density of QDs, and inhomogeneous broadening, especially when multistacked layers are used. In this paper, we demonstrate that a linear increase of the QD modal gain with the QD layers number, as typically achieved in multi-QW lasers, is possible by a careful control of the Stranski–Krastanov QDs growth and QDs stacking optimization. A low-transparency current density of 10 $hbox{A/cm}^{2}$ per QD layer and a modal gain of 6 $hbox{cm}^{-1}$ per QD layer were achieved from laser structures containing up to seven QD layers. We demonstrate 10-Gb/s direct modulation (until a temperature of 50 $^circ$ C) and high $T_{0}$ (110 K) from a single-mode device containing six QD layers.