GaN-Based Power Flip-Chip LEDs With Cu Submount

摘要

Nitride-based power flip-chip (FC) LEDs with Cu submount were proposed and prepared. With a much higher thermal conductivity, it was found that we can achieve a lower operation voltage under high-current injections and lower junction temperature from the FC LEDs with Cu submount. Compared with the power FC LEDs with Si submount, the reliability of the proposed device was also better.