机译:高速,低电流密度850nm VCSEL
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Gothenburg;
III-V semiconductors; current density; gallium arsenide; high-speed optical techniques; indium compounds; laser beams; optical design techniques; optical fabrication; optical modulation; semiconductor lasers; semiconductor quantum wells; surface emitting lasers; thermo-optical effects; GaAs; InGaAs; VCSEL fabrication; bandwidth 15 GHz; bandwidth 20 GHz; current-density; high-modulation bandwidth; high-speed VCSEL design; oxide-confined vertical cavity surface emitting laser; power 9 mW; quantum well; small-signal modulation bandwidth; temperature 25 degC; temperature 293 K to 298 K; temperature 55 degC; temperature 85 degC; thermal resistance; wavelength 850 nm; High-speed modulation; optical interconnects; surface-emitting lasers;
机译:散热对高速850 nm VCSEL调制带宽的影响
机译:有源层中具有p型δ掺杂的850 nm VCSEL,可提高高速和高温性能
机译:高速850 nm准单模VCSEL,用于扩展范围的光学互连
机译:高速低电流密度850 nm VCSEL
机译:晶圆键合底部发射的850 nm VCSEL,用于短距离自由空间光学互连。
机译:数据速率高达50 Gb / s的高速VCSEL的设计建模和制造
机译:高速850 nm VCSEL的操作错误高达57 Gbit / s