A Near-Infrared Digital Camera in Polycrystalline Germanium Integrated on Silicon

摘要

We report on the first silicon-integrated 2-D light-sensitive array equipped with complementary-metal-oxide-semiconductor addressing and readout electronics and operating in the near infrared. The chip includes 64 times 8 pixels, 64 analog-to-digital converters, cancellation circuitry for dark current, and facilities for test/calibration. We describe its architecture and fabrication, its electronic and optoelectronic characterization, as well as its operation as a near-infrared camera