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Spatial Noise and Correctability of Type-II InAs/GaSb Focal Plane Arrays

机译:II型InAs / GaSb焦平面阵列的空间噪声和可校正性

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A long wavelength infrared focal plane array based on Type-II InAs/GaSb superlattices was fabricated and characterized at 80 K. The noise equivalent temperature difference of the array was measured as low as 23 mK $({rm f}#={2})$, for an integration time of 0.129 ms. The spatial noise of the array was dominated by the nonuniformity of the illumination through the circular aperture. A standard two-point nonuniformity correction improved the inhomogeneity equivalent temperature difference to 16 mK. The correctability just after calibration was 0.6. The long-term stability time was superior to 25 hours.
机译:制作了基于II型InAs / GaSb超晶格的长波长红外焦平面阵列,并在80 K下进行了表征。测得的阵列等效噪声温差低至23 mK $({rm f}#= {2} )$,积分时间为0.129 ms。阵列的空间噪声主要是通过圆形孔的照明不均匀引起的。标准的两点非均匀性校正将非均匀性等效温度差提高到16 mK。刚校准后的可校正性为0.6。长期稳定时间优于25小时。

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