Characteristics of a GaN-Based Light-Emitting Diode With an Inserted p-GaN/i-InGaN Superlattice Structure

摘要

An interesting GaN-based light-emitting diode (LED) with a ten-period i (undoped)-InGaN/p (Mg doped)-GaN (2.5 nm/5 nm) superlattice (SL) structure, inserted between a multiple-quantum well (MQW) structure and a p-GaN layer, is fabricated and studied. This inserted SL can be regarded as a confinement layer of holes to enhance the hole injection efficiency. As compared with a conventional LED device without the SL structure, the studied LED exhibits better current spreading performance and an improved quality. The turn-on voltage, at 20 mA, is decreased from 3.32 to 3.14 V due to the reduced contact resistance as well as the more uniformity of carriers injection. A substantially reduced leakage current ($10^{- 7}$ to $10^{- 9}$ A) and higher endurance of the reverse current pulse are found. The measured output power and external quantum efficiency (EQE) of the studied LED are 13.6 mW and 24.8%. In addition, as compared with the conventional LED without the SL structure, the significant enhancement of 25.4% in output power as well as the increment of 5% in EQE are observed due to the superior current spreading ability and reduction of dislocations offered by the SL structure.