Design Strategies for InGaN-Based Green Lasers

摘要

A design parameter subspace is explored to suggest epitaxial layer structures which maximize gain spectral density at a target wavelength for green $hbox{In}_{x}{hbox {Ga}}_{1-x}{hbox{N}}$ -based single quantum well active regions. The dependence of the fundamental optical transition energy on the thickness and composition of barriers and wells is discussed, and the sensitivity of gain spectral density to design parameters, including the choice of buffer layer material, is investigated.